STGW30H60DLFB

Overview

The STGW30H60DLFB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the HB series, manufactured by STMicroelectronics. It utilizes an advanced trench gate field-stop structure to optimize efficiency in frequency converters. The device features a collector-emitter maximum voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a typical saturation voltage of 1.55 V at 30 A and a maximum power dissipation of 260 W. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package for through-hole mounting.

Feature Summary

• Advanced trench gate field-stop technology for optimized switching and conduction performance
• Positive VCE(sat) temperature coefficient enabling safer parallel operation
• Very fast soft recovery antiparallel diode integrated with the IGBT
• Minimized tail current for high-speed switching applications

Applications

• High-frequency motor drives and inverters
• Switched-mode power supplies (SMPS)
• Induction heating systems
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix to ensure the correct packaging format, such as tube or reel, matches the assembly requirements. Confirm RoHS compliance status and check for any End-of-Life (EOL) notices or Product Change Notifications (PCN) that may affect long-term availability. Cross-reference the manufacturer part number with distributor listings to validate authenticity and current stock status before finalizing procurement.

Selection Notes

Select this component for designs requiring a balance between low conduction losses and fast switching speeds. The 600 V rating suits medium-voltage applications, while the 30 A current capability supports moderate power levels. Ensure the thermal management solution can handle the 260 W power dissipation at the expected operating junction temperature. Verify that the gate drive circuitry aligns with the specified ±20 V gate-emitter voltage limits.

Part Context

This IGBT belongs to STMicroelectronics' HB series, which focuses on providing an optimum compromise between conduction and switching losses. The series is designed to maximize efficiency in frequency converters. The STGW30H60DLFB specifically targets applications where high speed and tight parameter distribution are critical for system performance and reliability.

Replacement Considerations

Direct replacements should be sought from the same HB series or comparable 600 V, 30 A IGBTs with similar VCE(sat) and switching characteristics. Verify pinout compatibility and thermal resistance values when substituting with parts from other manufacturers. Ensure the alternative device meets the same safety paralleling requirements if used in parallel configurations.