STGW30M65DF2

Overview

The STGW30M65DF2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes an advanced trench gate field-stop structure and belongs to the M series, designed for low-loss applications. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 60 A at 25°C. Typical saturation voltage is 1.55 V at 30 A. It operates within a junction temperature range of -55°C to +175°C and has a power dissipation rating of 258 W. The component is housed in a TO-247-3 through-hole package.

Feature Summary

• Advanced proprietary trench gate field-stop structure for optimized performance
• Positive VCE(sat) temperature coefficient enabling safer paralleling operation
• Integrated soft and very fast-recovery antiparallel diode
• Minimum short-circuit withstand time of 6 microseconds

Applications

• Inverter systems requiring optimal balance between performance and efficiency
• Motor drive applications demanding high reliability
• Industrial power conversion equipment

Procurement Notes

Verify component authenticity upon receipt as this part number is listed as obsolete with end-of-life status. Confirm final availability with the manufacturer or authorized distributors before design finalization. Ensure storage conditions comply with semiconductor handling standards to prevent moisture sensitivity damage prior to soldering.

Selection Notes

Select this component for designs prioritizing low conduction losses and robust short-circuit capability. The tight parameter distribution facilitates parallel operation for higher current requirements. Verify thermal management solutions accommodate the specified power dissipation and operating temperature limits within the target application environment.

Part Context

This IGBT is part of the M series from STMicroelectronics, which emphasizes low loss and short-circuit functionality. It shares architectural similarities with other M series devices like the STGB30M65DF2 but differs in packaging and mounting style. The technology represents a balance between switching speed and conduction efficiency for medium-power industrial applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As the component is marked obsolete, engineers should consult official replacement guides or contact STMicroelectronics directly for qualified alternatives.