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Product Detailed Parameters
- Description：IGBT 600V 60A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：305µJ (on), 181µJ (off)
- Input Type：Standard
- Gate Charge：102 nC
- Td (on/off) @ 25°C：29.5ns/118ns
- Test Condition：390V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW30NC60WD is a 30 A, 600 V ultra fast IGBT utilizing the Power MESH process. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 30 A at 100 °C. The device operates with a maximum junction temperature of 150 °C and total dissipation of 200 W. Key electrical parameters include a saturation voltage of 2.5 V max at 20 A, input capacitance of 2080 pF, and turn-off delay time of 118 ns. It includes an integrated antiparallel diode with a reverse recovery time of 40 ns.
Feature Summary
- High frequency operation capability
- Lower CRES/CIES ratio to prevent cross-conduction susceptibility
- Very soft ultra fast recovery antiparallel diode
Applications
- High frequency motor controls
- Inverters and UPS systems
- HF, SMPS and PFC in hard switch topologies
- Resonant converter topologies
Procurement Notes
Verify component authenticity by checking the marking code GW30NC60WD on the TO-247 package against official datasheets. Confirm RoHS compliance via ECOPACK lead-free specifications. Ensure thermal management design accounts for the specified junction-to-case resistance values under actual operating conditions.
Selection Notes
Select this component for designs requiring high switching frequencies up to 50 kHz. The low CRES/CIES ratio makes it suitable for applications where cross-conduction must be avoided. Verify that the gate drive circuitry supports the required 15 V level and manages the specified gate charge characteristics effectively.
Part Context
This device belongs to the STMicroelectronics discrete IGBT family designed for power conversion. It utilizes the advanced Power MESH process to balance switching performance with low on-state behavior. The TO-247 through-hole packaging facilitates mounting on heatsinks for industrial power electronics applications.
Replacement Considerations
STGW30NC60KD
FAQ
What is the maximum collector current at elevated temperatures?
The continuous collector current is rated at 30 A when the case temperature is 100 °C.
How does the device handle reverse recovery?
It integrates a very soft ultra fast recovery antiparallel diode with a typical reverse recovery time of 40 ns at 25 °C.
What is the significance of the CRES/CIES ratio?
A lower CRES/CIES ratio eliminates cross-conduction susceptibility, enhancing reliability in high-frequency switching applications.
