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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：250 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 20A
- Power - Max：200 W
- Switching Energy：840µJ (on), 7.4mJ (off)
- Input Type：Standard
- Gate Charge：83 nC
- Td (on/off) @ 25°C：92ns/1.1µs
- Test Condition：480V, 20A, 100Ohm, 15V
- Reverse Recovery Time (trr)：44 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW35NB60SD is a 35 A, 600 V Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the advanced Power MESH™ process to achieve extremely low on-state voltage drop in low-frequency working conditions up to 1 kHz. The device integrates a soft and fast recovery antiparallel diode, providing high current capability and low switching losses. This component is designed for robust performance in power conversion applications requiring efficient handling of moderate currents at standard industrial voltages.
Feature Summary
- Utilizes advanced Power MESH™ technology for optimized on-state behavior
- Integrates a very soft ultra-fast recovery antiparallel diode
- Designed for low-frequency operation with minimal conduction losses
Applications
- Motor drives and inverters
- Switched-mode power supplies (SMPS)
- Industrial power control systems
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm package integrity and marking consistency against official datasheets. Check for obsolete status notifications as availability may vary. Ensure storage conditions comply with moisture sensitivity levels specified in the manufacturing documentation prior to assembly.
Selection Notes
Select this IGBT when designing circuits operating below 1 kHz that require low conduction losses. Evaluate thermal management requirements based on the specific package type and ambient conditions. Consider the integrated diode characteristics for freewheeling applications. Compare total system efficiency against alternative technologies if higher frequency operation is required.
Part Context
This component belongs to STMicroelectronics' IGBT portfolio featuring the Power MESH™ generation. It shares technological lineage with other devices in the series designed for improved trade-offs between switching performance and on-state voltage drop. The product line targets general-purpose power electronics applications requiring reliable high-voltage switching capabilities.
Replacement Considerations
Consult official STMicroelectronics substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully. Verify compatibility with existing gate drive circuits and thermal interfaces before implementing any substitute components.
