STGW35NC120HD

Overview

The STGW35NC120HD is a very fast IGBT utilizing the advanced PowerMESH process, co-packaged with an ultrafast free-wheeling diode. It features a collector-emitter voltage of 1200 V and a continuous collector current of 32 A at TC = 100 °C. The device operates within a junction temperature range of –55 to 150 °C. Key electrical parameters include a maximum collector-emitter saturation voltage of 2.75 V at 20 A and 125 °C, and a total gate charge of 110 nC under standard test conditions.

Feature Summary

• Utilizes advanced PowerMESH technology for excellent trade-off between switching performance and low on-state behavior
• Co-packaged with an ultrafast free-wheeling diode for high-frequency applications
• Optimized for soft switching applications with low on-losses and low gate charge

Applications

• Induction heating
• High frequency inverters
• UPS

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official datasheet documentation. Confirm that the physical package matches the specified TO-247 long leads configuration. Ensure the ordering code aligns exactly with the required technical specifications before finalizing procurement actions.

Selection Notes

Select this component for designs requiring high-voltage handling and rapid switching capabilities. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the integrated diode characteristics when designing snubber circuits or freewheeling paths in the target application topology.

Part Context

This part belongs to STMicroelectronics' PowerMESH IGBT family, which employs patented strip layout technology. The 'H' suffix typically identifies devices optimized for high-frequency applications, characterized by reduced fall times while maintaining low voltage drops compared to standard variants.

Replacement Considerations

STGB3NC120HD: 7 A, 1200 V very fast IGBT with ultrafast diode.