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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 20A
- Power - Max：260 W
- Switching Energy：305µJ (on), 181µJ (off)
- Input Type：Standard
- Gate Charge：102 nC
- Td (on/off) @ 25°C：29.5ns/118ns
- Test Condition：390V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW35NC60WD is a 40 A, 600 V ultra fast IGBT utilizing the Power MESH™ process. It features an integrated antiparallel diode with very soft ultra fast recovery characteristics. The device supports high frequency operation up to 50 kHz and offers a low CRES/CIES ratio to prevent cross-conduction susceptibility. Absolute maximum ratings include a collector-emitter voltage of 600 V, continuous collector current of 70 A at 25 °C, and total dissipation of 260 W at 25 °C case temperature. Thermal resistance from junction to case is 0.48 °C/W for the IGBT.
Feature Summary
- Utilizes advanced Power MESH™ process for optimized switching performance and low on-state behavior
- Features a very soft ultra fast recovery antiparallel diode
- Provides a lower CRES/CIES ratio to eliminate cross-conduction susceptibility
- Supports high frequency operation suitable for demanding power conversion topologies
Applications
- High frequency motor controls and inverters
- Uninterruptible Power Supplies (UPS)
- Hard switch and resonant topology SMPS and PFC circuits
Procurement Notes
Verify component authenticity by checking the marking code GW35NC60WD against official STMicroelectronics documentation. Confirm the package type matches TO-247 long leads and ensure compliance with ECOPACK® lead-free specifications. Review the datasheet revision history to validate technical parameters before integration into designs.
Selection Notes
Select this component for applications requiring high frequency switching capabilities up to 50 kHz. Ensure thermal management design accounts for the specified junction-to-case thermal resistance. Verify that the gate drive circuitry aligns with the recommended test conditions for optimal switching loss performance.
Part Context
This device belongs to the STGW series of ultra fast IGBTs manufactured by STMicroelectronics. It is designed as a single N-channel transistor packaged in a TO-247 long leads configuration. The product line emphasizes the trade-off between switching speed and conduction losses for industrial power electronics.
Replacement Considerations
Direct substitutes within the same family include the STGW30NC60WD and STGW19NC60WD. These alternatives share similar packaging and electrical characteristics but differ in rated current capacity. Evaluate specific current requirements when considering these variants.
