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The STGW40H120F2 is a single N-channel IGBT from the H series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (Ic) of 40 A at 25°C. The device has a typical saturation voltage (VCEsat) of 2.1 V at 40 A and 15 V gate drive. Maximum power dissipation is 468 W in a TO-247-3 package. Operating junction temperature ranges from -55°C to 175°C.
Verify the specific suffix F2 against the official datasheet to confirm pinout and electrical characteristics match the design requirements. Ensure the TO-247-3 through-hole package aligns with the thermal management strategy. Confirm RoHS compliance status if required by the target market regulations before finalizing procurement orders.
Select this component when high switching frequency efficiency is critical. The H series offers a balance between conduction and switching losses. Consider the 1200V rating for medium-voltage applications. Evaluate thermal resistance requirements for the TO-247-3 package under expected load conditions. Verify gate drive compatibility with the 15V standard operating voltage.
This part belongs to STMicroelectronics' H series of trench gate field-stop IGBTs. The series is designed for high-speed applications requiring low switching losses. The TO-247-3 package provides robust mechanical stability for through-hole mounting. The F2 suffix indicates specific manufacturing and packaging details within the product line.
STGW40H120DF2 is a documented alternative within the same series. Verify pinout compatibility and exact electrical parameter tolerances before substitution. Ensure thermal interface material selection remains consistent with the original design specifications.