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Product Detailed Parameters
- Description：IGBT TRENCH FS 1200V 80A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 40A
- Power - Max：468 W
- Switching Energy：1.5mJ (on), 2.25mJ (off)
- Input Type：Standard
- Gate Charge：125 nC
- Td (on/off) @ 25°C：35ns/140ns
- Test Condition：600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：355 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW40M120DF3 is a trench gate field-stop IGBT from the M series, rated at 1200 V and 40 A. It features a typical collector-emitter saturation voltage of 1.85 V at 40 A. The device supports a maximum junction temperature of 175 °C and offers a minimum short-circuit withstand time of 10 μs. It utilizes an advanced proprietary structure to balance inverter performance and efficiency.
Feature Summary
- Advanced trench gate field-stop structure for low loss and short-circuit functionality
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
- Tight parameter distribution for consistent performance across devices
- Soft and very fast-recovery antiparallel diode
Applications
- Inverter systems requiring optimal balance between performance and efficiency
- Industrial motor drives
- High-frequency converter applications
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm lot codes and datasheet revisions match design requirements. Ensure proper handling procedures are followed due to semiconductor sensitivity. Cross-reference part numbers with official manufacturer databases to avoid counterfeit risks.
Selection Notes
Select this component for designs prioritizing low conduction losses and robust short-circuit tolerance. The positive temperature coefficient facilitates parallel operation without current balancing circuits. Consider thermal management solutions suitable for 175 °C junction temperatures. Evaluate system switching frequencies against the device's soft recovery diode characteristics.
Part Context
Part of the M series IGBT lineup developed by STMicroelectronics. This series targets applications where low loss and short-circuit capability are essential. The technology represents an evolution in trench gate field-stop structures aimed at improving inverter system efficiency.
Replacement Considerations
Check STMicroelectronics documentation for officially confirmed substitute part numbers. Verify pin compatibility and electrical parameters before substitution. Ensure replacement components meet the same short-circuit withstand and thermal requirements.
