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The STGW40N120KD is a 40 A, 1200 V short circuit rugged IGBT with an integrated ultrafast diode. It features low on-losses and high current capability. The device has a continuous collector current of 80 A at 25°C and power dissipation of 240 W. Operating temperature range is -55°C to +125°C. Gate-emitter voltage is ±25 V. Threshold voltage is typically 4.9 V. Gate charge is 61 nC. Package is HIP-247-3.
Verify availability as this component may be obsolete. Check for direct substitutes like STGW25M120DF3 if production continuity is required. Confirm package type HIP-247-3 matches your PCB footprint. Ensure thermal management supports 240 W dissipation. Validate AEC-Q101 or industrial grade requirements against datasheet specifications before ordering.
Select this IGBT for high-voltage applications requiring short-circuit withstand time of 10 μs. Consider the integrated ultrafast diode for freewheeling needs. Evaluate thermal resistance for heatsink design. Compare gate charge characteristics for switching speed requirements. Ensure voltage ratings meet system peak transient levels.
This part belongs to STMicroelectronics' rugged IGBT series designed for demanding industrial environments. It combines high current handling with robust short-circuit tolerance. The HIP-247-3 package facilitates efficient heat dissipation. It targets applications where reliability under fault conditions is critical.
STGW25M120DF3 is listed as a similar substitute. Verify pinout compatibility and electrical parameters match your design requirements. Check if the alternative meets the same short-circuit ruggedness and diode characteristics.