ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 80A TO-247-3
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 40A
- Power - Max：260 W
- Switching Energy：330µJ (on), 720µJ (off)
- Input Type：Standard
- Gate Charge：214 nC
- Td (on/off) @ 25°C：43ns/140ns
- Test Condition：390V, 40A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
Download product information
Overview
The STGW40NC60V is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the PowerMESH process to achieve an optimal balance between switching performance and low on-state behavior. The device features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 30 A at 25 °C. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-247 package.
Feature Summary
- PowerMESH technology for optimized conduction and switching trade-offs
- High frequency operation capability up to 50 kHz
- Low cross-conduction susceptibility due to favorable capacitance ratios
Applications
- High-frequency power converters
- Motor control systems
- Induction heating applications
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or certified supply chain partners. Confirm that the part number matches the exact datasheet specifications, as suffixes may indicate variations in packaging or specific manufacturing lot attributes. Ensure compliance with relevant RoHS standards before integration into final assemblies.
Selection Notes
Select this IGBT when designing circuits requiring high-frequency operation around 50 kHz with moderate current handling. The PowerMESH process makes it suitable for applications demanding efficient thermal management and reliable switching characteristics. Evaluate thermal resistance requirements against the system's heat dissipation capabilities to ensure stable operation within the specified temperature limits.
Part Context
This component belongs to the STGW series of discrete IGBTs from STMicroelectronics. It shares design lineage with other PowerMESH-based devices like the STGW20NC60V, offering similar technological benefits but tailored for specific current and voltage ratings within the 600 V class portfolio.
Replacement Considerations
Direct replacements include the STGW20NC60V for lower current requirements or the STGW30NC60VD for updated UltraFAST diode integration. Verify pinout compatibility and thermal characteristics when substituting with other 600 V IGBTs in the TO-247 package.
