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The STGW40V60DF is a single N-channel IGBT from the V series, utilizing Trench Gate Field-Stop technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 40 A at 25°C. The device operates with a maximum power dissipation (Pd) of 283 W and a typical saturation voltage (VCEsat) of 1.8 V. It supports switching frequencies up to 1 MHz and has a maximum junction temperature of 175°C. The component is housed in a TO-247 package for through-hole mounting.
Verify the specific ordering suffix against official datasheets to confirm exact electrical characteristics and packaging options. Ensure compatibility with thermal management requirements given the 283 W power dissipation rating. Confirm RoHS compliance status if required by local regulations. Check for any recent product change notifications regarding manufacturing sites or materials.
Select this component when balancing conduction and switching losses is critical for system efficiency. The tight parameter distribution facilitates reliable parallel operation for higher current applications. Consider the 175°C maximum junction temperature for robust thermal design margins in demanding environments.
This part belongs to the V series of IGBTs developed using advanced proprietary trench gate field-stop structures. The series is designed to provide an optimum compromise between conduction and switching losses, specifically targeting the maximization of efficiency in very high-frequency converter applications.
STGW40V60F: Similar V series IGBT with comparable specifications.