STGW50H65DFB2-4

Overview

The STGW50H65DFB2-4 is a high-speed IGBT from the HB2 series, utilizing trench gate field-stop technology in a TO247-4 package. It features a collector-emitter voltage of 650 V and a continuous collector current of 86 A at 25 °C case temperature. The typical saturation voltage is 1.55 V at 50 A. Key electrical parameters include a maximum junction temperature of 175 °C, total power dissipation of 272 W, and thermal resistance junction-case of 0.55 °C/W for the IGBT. Dynamic characteristics show turn-on energy of 629 µJ and turn-off energy of 478 µJ at 400 V and 50 A.

Feature Summary

• Advanced trench gate field-stop structure optimized for conduction and switching efficiency
• Integrated Kelvin pin separating power path from driving signal for improved switching performance
• Co-packaged very fast soft recovery antiparallel diode with minimized tail current
• Positive VCE(sat) temperature coefficient enabling safer paralleling operation

Applications

• Welding equipment
• Power factor correction circuits
• Uninterruptible power supplies (UPS)
• Solar inverters
• Battery chargers

Procurement Notes

Verify component authenticity by checking the marking code G50H65DFB2 against official datasheets. Confirm the package type is TO247-4 and ensure the ordering suffix matches the specific variant required. Cross-reference the document revision DS13420 Rev 1 to guarantee access to the latest technical specifications and compliance information before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high switching frequencies and low conduction losses. The TO247-4 package provides robust mechanical stability and efficient heat dissipation through the tab. Ensure the gate drive circuit accommodates the 151 nC total gate charge and that the thermal design maintains the junction temperature below 175 °C under peak load conditions.

Part Context

This device belongs to the STMicroelectronics HB2 series of 650 V IGBTs. It represents an evolution of the proprietary trench gate field-stop structure, offering improved VCE(sat) behavior at low currents compared to previous generations. The series is designed to maximize efficiency in fast-switching power conversion applications through reduced switching energy and tight parameter distribution.

Replacement Considerations

STGWA50H65DFB2 is a comparable part within the same family but lacks the dedicated Kelvin emitter pin found in the -4 suffix variant. Verify if the application requires the separate gate drive connection provided by the fourth pin for optimal switching performance before substituting.