STGW50HF60SD

$2.87

Description：IGBT 600V 110A TO-247-3
Series：-

SKU:8d3d4359f7df Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 110A TO-247-3
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：110 A
Current - Collector Pulsed (Icm)：130 A
Vce(on) (Max) @ Vge, Ic：1.45V @ 15V, 30A
Power - Max：284 W
Switching Energy：250µJ (on), 4.2mJ (off)
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：50ns/220ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：67 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW50HF60SD

Overview

The STGW50HF60SD is a 600 V, 60 A N-channel IGBT with an integrated antiparallel diode in a TO-247 package. It utilizes advanced planar technology to achieve very low on-state voltage drop and limited turn-off losses. The device supports continuous collector currents of 110 A at 25 °C case temperature and 60 A at 100 °C. Key electrical parameters include a maximum collector-emitter breakdown voltage of 600 V, a gate-emitter voltage rating of ±20 V, and a total power dissipation of 284 W at 25 °C. The junction temperature range spans from -55 °C to +150 °C.

Feature Summary

Very low on-state voltage drop for improved efficiency
Limited turn-off switching losses
High current capability
Soft and fast recovery antiparallel diode

Applications

Photovoltaic (PV) inverters
Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific ordering code against official manufacturer documentation to ensure correct component identification. Confirm that the package type matches the required mechanical footprint and thermal management strategy. Check for environmental compliance markings such as ECOPACK specifications if applicable to your manufacturing standards. Ensure all static and dynamic electrical ratings align with your system's operational limits before finalizing procurement.

Selection Notes

Select this component for mixed frequency topologies where power factor is less than or equal to one. The device is optimized for low-frequency switching applications requiring high current handling. Evaluate the thermal resistance values to determine appropriate heatsinking requirements. Consider the soft recovery characteristics of the integrated diode when designing snubber circuits or managing reverse recovery events in the target application.

Part Context

This IGBT belongs to the HF series, characterized by very low drop performance. It is designed using advanced planar technology distinct from trench gate field-stop structures found in other STMicroelectronics lines. The component integrates a single N-channel IGBT with a co-packaged diode in a standard three-terminal through-hole configuration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative manufacturers or different series within the same product family.