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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-4
- Series：HB
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 60A
- Power - Max：375 W
- Switching Energy：346µJ (on), 1.161mJ (off)
- Input Type：Standard
- Gate Charge：306 nC
- Td (on/off) @ 25°C：65ns/261ns
- Test Condition：400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr)：60 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4
- Grade：-
- Qualification：-
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Overview
The STGW60H65DFB-4 is a trench gate field-stop IGBT from the HB series, rated at 650 V collector-emitter voltage and 60 A continuous collector current. It utilizes an advanced proprietary structure to optimize the balance between conduction and switching losses. The device features a low saturation voltage of 1.6 V typical at 60 A and supports a maximum junction temperature of 175 °C. Packaged in a TO-247-3 through-hole configuration, it offers a power dissipation capacity of 375 W and operates within a temperature range of -55 °C to +175 °C.
Feature Summary
- Advanced trench gate field-stop structure for optimized efficiency
- High-speed switching with minimized tail current
- Positive VCE(sat) temperature coefficient for safe paralleling
Applications
- High-frequency converters
- Uninterruptible power supplies (UPS)
- Welding machines
- Photovoltaic inverters
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and electrical characteristics match the design requirements. Ensure thermal management solutions accommodate the specified power dissipation limits. Confirm RoHS compliance status if required by regulatory standards. Cross-reference the manufacturer's latest documentation for any updates to the HB series specifications.
Selection Notes
Select this component for applications requiring high switching frequencies and efficient power conversion. The tight parameter distribution facilitates reliable parallel operation. Consider the thermal resistance and package type when designing heat sinks. Evaluate the short-circuit withstand time requirements against the system protection capabilities.
Part Context
This part belongs to the HB series of IGBTs developed by STMicroelectronics. The series is characterized by its trench gate field-stop technology, which provides a superior trade-off between conduction and switching losses compared to standard IGBTs. It is designed for high-efficiency power electronics applications.
Replacement Considerations
Direct substitutes include other parts within the STMicroelectronics HB series such as STGW60H65DFB or STGWT60H65DFB, provided the pinout and electrical ratings are compatible. Verify that alternative components meet the same thermal and switching performance criteria.
