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The STGW60H65DFB is a single N-channel IGBT from the HB series, utilizing trench gate field-stop technology. It features a 650 V collector-emitter voltage (VCEO) and a continuous collector current (Ic) of 60 A, with a maximum rated current of 80 A at 25°C. The device exhibits a typical saturation voltage (VCE(sat)) of 1.6 V at 60 A and supports a power dissipation (Pd) of 375 W. Operating within a temperature range of -55°C to +175°C, it is housed in a TO-247-3 through-hole package.
Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the TO-247-3 package dimensions match the target PCB footprint requirements. Ensure thermal management solutions are adequate for the specified 375 W power dissipation limit under actual operating conditions.
Select this component when high-speed switching and low conduction losses are critical for system efficiency. The HB series architecture provides a balanced compromise between switching and conduction characteristics. Consider the positive temperature coefficient for applications requiring multiple devices in parallel to ensure stable current sharing without additional balancing components.
This part belongs to the STMicroelectronics HB series of trench gate field-stop IGBTs. The series is engineered to maximize converter efficiency by minimizing both switching and conduction losses. The STGW60H65DFB specifically targets industrial applications requiring robust performance in the 650 V voltage class with high current handling capabilities.
Direct substitutes include other parts within the same HB series family, such as the STGWT60H65DFB, which shares identical electrical specifications but utilizes a TO-3P package instead of TO-247-3. Verify pinout compatibility and thermal resistance differences when considering alternative packages.