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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 120A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 60A
- Power - Max：420 W
- Switching Energy：940µJ (on), 1.06mJ (off)
- Input Type：Standard
- Gate Charge：217 nC
- Td (on/off) @ 25°C：85ns/178ns
- Test Condition：400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr)：19 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW60H65DRF is a Trench Gate Field-Stop IGBT from the HB series, rated at 650 V and 60 A. It features a maximum junction temperature of 175 °C and a typical saturation voltage (VCE(sat)) of 1.6 V at IC = 60 A. The device exhibits minimized tail current and very fast soft recovery antiparallel diode characteristics. Its slightly positive VCE(sat) temperature coefficient and tight parameter distribution facilitate safer paralleling operation. Designed for high-speed switching, it offers low thermal resistance to maximize efficiency in frequency converters.
Feature Summary
- Advanced proprietary trench gate field-stop structure
- Optimized balance between conduction and switching loss
- Very fast soft recovery antiparallel diode
Applications
- Frequency converters
- High speed switching applications
Procurement Notes
Verify the specific ordering suffix against official STMicroelectronics documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the required HB series variant for the intended design parameters. Cross-reference the datasheet revision date with the supplier's certificate of conformity to guarantee authenticity and compliance with current manufacturing standards.
Selection Notes
Select this component for designs requiring an optimum compromise between conduction and switching losses. The tight parameter distribution supports parallel operation for higher current capacity. Verify that the system operates within the specified 175 °C junction temperature limit and utilizes the device's high-speed switching capabilities effectively.
Part Context
This IGBT belongs to STMicroelectronics' HB series, which represents a family of devices developed using advanced trench gate field-stop technology. The series aims to maximize efficiency in power conversion systems by balancing electrical performance metrics. The STGW60H65DRF specifically targets high-power applications demanding reliable switching and robust thermal performance.
Replacement Considerations
Check for other HB series variants with matching voltage and current ratings. Verify compatibility of pinout and thermal characteristics if substituting with similar trench gate field-stop IGBTs from the same manufacturer.
