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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 80A TO-247-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 60A
- Power - Max：375 W
- Switching Energy：750µJ (on), 550µJ (off)
- Input Type：Standard
- Gate Charge：334 nC
- Td (on/off) @ 25°C：60ns/208ns
- Test Condition：400V, 60A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：74 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW60V60DF is a Trench Gate Field Stop IGBT from the V series, designed for very high frequency converters. It features an N-channel configuration in a TO-247 through-hole package with three pins. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 60 A. The device exhibits a maximum collector-emitter saturation voltage (VceSAT) of 2.3 V and supports a switching speed of 1 MHz. Maximum power dissipation is rated at 375 W, with an operating temperature range spanning from -55°C to +175°C.
Feature Summary
- Utilizes advanced proprietary trench gate field-stop structure for optimized efficiency.
- Features tail-less switching off characteristics for reduced switching losses.
- Positive VCE(sat) temperature coefficient enables safer paralleling operation.
Applications
- Very high frequency converters
- High-efficiency power conversion systems
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number with official datasheets. Confirm that the TO-247 package dimensions and pinout match the specified requirements. Ensure the supplier provides traceability documentation to guarantee the integrity of the semiconductor devices before integration into designs.
Selection Notes
Select this component when designing circuits requiring high-frequency operation up to 1 MHz. The 600 V rating and 60 A current capacity suit medium-power applications. Consider the positive temperature coefficient for parallel configurations. Verify thermal management capabilities align with the 375 W dissipation rating and 175°C junction temperature limit.
Part Context
This device belongs to the STMicroelectronics V series IGBTs, which utilize Trench Gate Field Stop technology. This series aims to balance conduction and switching losses to maximize converter efficiency. The specific model integrates a fast soft recovery antiparallel diode, enhancing performance in hard-switching applications compared to standard IGBTs.
Replacement Considerations
STGW30V60DF shares the same V series technology and package but has different current ratings. Verify electrical compatibility carefully before substitution. No other direct substitutes are confirmed in the provided data.
