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Product Detailed Parameters
- Description：IGBT BIPO 600V 60A TO247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The STGW60V60DLF is a Trench gate field-stop IGBT from the V series, rated at 600 V and 60 A. It utilizes an advanced proprietary trench gate field-stop structure to optimize the balance between conduction and switching losses for high-frequency converters. Key electrical parameters include a maximum junction temperature of 175 °C, a typical saturation voltage (VCE(sat)) of 1.85 V at IC = 60 A, and tail-less switching off characteristics. The device features a very fast soft recovery antiparallel diode and tight parameter distribution to ensure safe paralleling operation.
Feature Summary
- Trench gate field-stop structure for optimized efficiency in high-frequency applications
- Tail-less switching off capability reducing switching losses
- Positive VCE(sat) temperature coefficient enabling safer parallel operation
- Integrated fast soft recovery antiparallel diode
Applications
- Very high frequency power converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-efficiency switched-mode power supplies
Procurement Notes
Verify the specific suffix 'DLF' against official STMicroelectronics documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the V series datasheet requirements for thermal management and gate drive conditions. Cross-reference the part number with authorized distributors to confirm current availability and authenticity before procurement.
Selection Notes
Select this IGBT for designs requiring a balance of low conduction loss and fast switching speed at 600 V. The tight parameter distribution makes it suitable for parallel configurations where current sharing is critical. Consider the thermal resistance and junction temperature limits when designing heat sinks for high-power density applications.
Part Context
The STGW60V60DLF belongs to STMicroelectronics' V series of IGBTs, which are engineered for high-frequency performance. This series uses trench gate field-stop technology to minimize both conduction and switching losses. It is designed to complement fast recovery diodes and is often used in modules or discrete setups for efficient power conversion.
Replacement Considerations
Direct replacements should be sought within the STMicroelectronics V series 600 V, 60 A IGBT lineup. Verify pin compatibility and thermal characteristics. Other manufacturers' 600 V trench-gate IGBTs may require re-evaluation of gate drive circuits due to differences in switching speed and parasitic capacitances.
