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The STGW60V60F is a single N-channel IGBT from the V series, utilizing an advanced trench gate field-stop structure. It operates with a collector-emitter voltage of 600 V and delivers a continuous collector current of 80 A at 25 °C case temperature. The device features a typical saturation voltage of 1.85 V at 60 A and supports a maximum junction temperature of 175 °C. Packaged in TO-247 for through-hole mounting, it offers low thermal resistance (RthJC of 0.4 °C/W) and tail-less switching off characteristics.
Verify the specific ordering code against official manufacturer documentation to confirm package type and environmental compliance grade. Ensure that the selected component matches the required electrical ratings for the target application environment. Cross-reference datasheet revision history to validate current technical specifications before finalizing procurement decisions.
Select this component when designing very high frequency converters requiring an optimum compromise between conduction and switching losses. The positive temperature coefficient of the saturation voltage facilitates reliable parallel operation without complex current sharing circuitry. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values.
This device belongs to the V series of IGBTs developed by STMicroelectronics. The series utilizes a trench gate field-stop technology designed to maximize efficiency in high-frequency applications. It represents a specific configuration within the broader portfolio of power switching devices offered by the manufacturer.
STGW60V60DF
The maximum continuous collector current is 80 A at a case temperature of 25 °C and 60 A at a case temperature of 100 °C.
The device features a positive VCE(sat) temperature coefficient and very tight parameter distribution, which result in safer and more stable paralleling operation.
The maximum operating junction temperature (TJ) is 175 °C.