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The STGW80V60F is an N-channel IGBT from the V series, utilizing Trench Gate Field-Stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A at 25°C. The device operates with a maximum junction temperature of 175°C and offers a typical saturation voltage of 1.8 V at 40 A. Packaged in TO-247 for through-hole mounting, it supports switching frequencies up to 1 MHz. Key characteristics include tail-less switching off, low thermal resistance, and safe paralleling capabilities due to tight parameter distribution.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm exact electrical parameters and packaging details. Ensure the component matches the required thermal and electrical ratings for the target application before procurement.
Select this component for designs requiring high switching speeds and low conduction losses. Consider the TO-247 package constraints for thermal management and ensure the gate drive circuitry supports the specified voltage limits for reliable operation.
This part belongs to the STMicroelectronics V series IGBT portfolio, which integrates advanced trench gate field-stop technology. The series is engineered to provide an optimal compromise between conduction and switching losses, targeting applications demanding high efficiency and fast switching performance.
Direct substitutes within the same family include STGW40V60DF and STGW20V60F, though these offer lower current ratings. Verify pin compatibility and thermal requirements when considering alternative models from the same product line.