STGW8M120DF3

$3.33

Description：IGBT TRENCH FS 1200V 16A TO-247
Series：M

SKU:93f8f2bce23a Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 16A TO-247
Series：M
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：16 A
Current - Collector Pulsed (Icm)：32 A
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 8A
Power - Max：167 W
Switching Energy：390µJ (on), 370µJ (Off)
Input Type：Standard
Gate Charge：32 nC
Td (on/off) @ 25°C：20ns/126ns
Test Condition：600V, 8A, 33Ohm, 15V
Reverse Recovery Time (trr)：103 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW8M120DF3

Overview

The STGW8M120DF3 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 8 A at 25°C. The device operates with a maximum junction temperature of 175°C and offers a typical saturation voltage of 1.85 V at rated current. Packaged in a TO-247 through-hole housing, it supports a minimum short-circuit withstand time of 10 μs.

Feature Summary

Advanced trench gate field-stop structure for low-loss performance
Positive VCE(sat) temperature coefficient for safe paralleling
Soft and fast-recovery antiparallel diode
Tight parameter distribution across devices

Applications

Inverter systems requiring high efficiency
Applications demanding short-circuit functionality
High-frequency power conversion circuits

Procurement Notes

Verify the specific datasheet revision and ordering suffix to ensure compatibility with design requirements. Confirm thermal resistance values and mounting torque specifications against the official STMicroelectronics documentation before integration into final assemblies.

Selection Notes

Select this component for designs prioritizing low conduction losses and robust short-circuit handling within the 1200 V class. Ensure the drive circuit can accommodate the gate charge characteristics and that the PCB layout supports the TO-247 package's thermal dissipation capabilities effectively.

Part Context

This part belongs to the M series of IGBTs developed by STMicroelectronics. The series is characterized by an optimal balance between inverter system performance and efficiency, specifically targeting applications where low loss and short-circuit resilience are critical operational parameters.