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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 145A TO247
- Series：HB2
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：145 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 100A
- Power - Max：441 W
- Switching Energy：2.2mJ (on), 1.4mJ (off)
- Input Type：Standard
- Gate Charge：288 nC
- Td (on/off) @ 25°C：30ns/130ns
- Test Condition：400V, 100A, 2.2Ohm, 15V
- Reverse Recovery Time (trr)：123 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA100H65DFB2 is a high-speed N-channel IGBT from the HB2 series, utilizing trench gate field-stop technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 145 A at 25 °C case temperature. The device operates with a maximum junction temperature of 175 °C and includes an integrated antiparallel diode with a continuous forward current of 110 A. Packaged in TO-247 long leads, it offers low thermal resistance (RthJC of 0.34 °C/W for the IGBT) and optimized switching energy characteristics.
Feature Summary
- Advanced trench gate field-stop structure for optimized conduction and reduced switching energy
- Integrated very fast soft recovery co-packaged diode with minimized tail current
- Positive VCE(sat) temperature coefficient enabling safe parallel operation
- Tight parameter distribution across units
Applications
- Welding equipment
- Power factor correction circuits
- Uninterruptible power supplies (UPS)
- Solar inverters
- Battery chargers
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the TO-247 long leads package dimensions match the target PCB footprint requirements. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.
Selection Notes
Select this component for applications requiring high efficiency at fast switching frequencies. The positive temperature coefficient of saturation voltage facilitates reliable parallel connection for higher current capacity. Consider the gate charge and switching energy specifications when designing the driver circuit to ensure optimal performance and minimize losses.
Part Context
This part belongs to the STMicroelectronics HB2 series of IGBTs. The series represents an evolution of proprietary trench gate field-stop structures designed to maximize efficiency in fast-switching applications. Other members include lower current variants such as the STGWA50H65DFB2 and STGWA75H65DFB2.
Replacement Considerations
Direct substitutes within the same family include STGWA75H65DFB2 and STGWA50H65DFB2. These parts share identical packaging and pinouts but offer different current ratings. Verify that the alternative part's current handling capabilities meet the specific application requirements.
