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The STGWA15S120DF3 is a single IGBT from the M series, utilizing trench gate field-stop technology. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 15 A at 25°C. The device operates within a junction temperature range of -55°C to +175°C and dissipates up to 375 W in a TO-247-3 package. Typical saturation voltage is 1.85 V at 15 A. Switching characteristics include a turn-on delay of approximately 31 ns and a turn-off delay of 147 ns under standard test conditions.
Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status via official datasheets before integration. Check for end-of-life notices as availability may be restricted. Ensure storage conditions meet moisture sensitivity level requirements to prevent package damage during soldering processes.
Select this component for applications demanding high switching frequency and low conduction losses. The TO-247-3 package suits through-hole mounting with robust thermal performance. Consider the 10 μs short-circuit withstand time for protection circuit design. Evaluate thermal resistance values against heatsink capabilities for optimal junction temperature management.
This part belongs to the STMicroelectronics M series IGBT family, designed for balanced performance between inverter system efficiency and reliability. The series emphasizes low-loss operation and enhanced short-circuit functionality. It shares architectural similarities with other M series devices like the STGWA25M120DF3 but offers specific current ratings tailored for mid-power applications.
The STGWA25M120DF3 serves as a parameter-equivalent alternative within the same M series family. Both utilize trench gate field-stop technology and share similar packaging and electrical characteristics. Verify current handling differences when substituting, as the replacement offers higher continuous current capacity.