STGWA20H65DFB2

Overview

The STGWA20H65DFB2 is a trench gate field-stop IGBT from the HB2 series, rated at 650 V collector-emitter voltage and 20 A continuous collector current. It features a low saturation voltage of 1.65 V typical at 20 A and operates up to a maximum junction temperature of 175 °C. The device includes a co-packaged very fast soft recovery diode with a forward voltage of 1.65 V typical at 20 A. Packaged in TO-247 long leads, it offers a thermal resistance junction-to-case of 1.02 °C/W for the IGBT and 1.47 °C/W for the diode.

Feature Summary

• Evolution of advanced proprietary trench gate field-stop structure optimized for conduction and switching energy.
• Co-packaged very fast soft recovery diode designed to maximize efficiency in high-speed applications.
• Minimized tail current and tight parameter distribution ensuring safe paralleling operation.

Applications

• Welding
• PFC converters - single phase input
• Solar inverters (string and central)
• Uninterruptable power supplies (UPS)
• EV charging - DC fast charging stations

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct component selection. Confirm that the package type matches the intended PCB layout requirements. Check for any environmental compliance certifications required by the target market regulations before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high switching frequency and low conduction losses. Ensure the gate drive circuit can handle the specified total gate charge of 56 nC. Verify that the thermal management system maintains the case temperature within limits to support the 40 A rating at 25 °C or derated currents at higher temperatures.

Part Context

This part belongs to the HB2 series of 650 V IGBTs, representing an evolution of the trench gate field-stop technology. It is designed to provide an optimum compromise between conduction and switching losses. The series utilizes a positive VCE(sat) temperature coefficient to facilitate safer parallel operation in high-power modules.

Replacement Considerations

STGB20H65DFB2 is a related component in the same HB2 series but uses a D2PAK package instead of TO-247 long leads. Verify pinout compatibility and thermal performance differences before substitution.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175 °C.

Does the device include an integrated diode?

Yes, a very fast soft recovery diode is co-packaged in antiparallel with the IGBT.

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 1.65 V at a collector current of 20 A.