STGWA25IH135DF2

STGWA25IH135DF2

$3.00
  • Description:IGBT TRENCH FS 1350V 50A TO247
  • Series:IH2

SKU:d45d00cf2fa1 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 1350V 50A TO247
  • Series:IH2
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1350 V
  • Current - Collector (Ic) (Max):50 A
  • Current - Collector Pulsed (Icm):100 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 20A
  • Power - Max:340 W
  • Switching Energy:1mJ (off)
  • Input Type:Standard
  • Gate Charge:166 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:600V, 20A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 Long Leads
  • Grade:-
  • Qualification:-

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STGWA25IH135DF2

Overview

The STGWA25IH135DF2 is a trench gate field-stop IGBT from the IH2 series, rated at 1350 V and 25 A. It features a collector-emitter saturation voltage of 1.7 V typical at 20 A and a maximum junction temperature of 175 °C. The device includes a co-packaged diode with a forward voltage of 1.15 V at 20 A. Thermal resistance from junction to case is 0.36 °C/W for the IGBT and 0.97 °C/W for the diode. Total power dissipation reaches 340 W at 25 °C case temperature.

Feature Summary

  • Optimized for soft commutation applications using advanced trench gate field-stop architecture
  • Minimized tail current reduces switching energy losses during turn-off
  • Positive VCE(sat) temperature coefficient enables safer parallel operation
  • Co-packaged diode provides very low drop and soft recovery characteristics

Applications

  • Induction heating systems
  • Resonant converters
  • Microwave ovens

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct component selection. Confirm package type and environmental compliance grades prior to purchase. Check for any recent datasheet revisions that may impact electrical ratings or thermal performance specifications.

Selection Notes

Select this component for high-voltage resonant topologies requiring optimized soft-switching performance. Ensure the design accommodates the 1350 V rating and 175 °C maximum junction temperature. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values for both the IGBT and the integrated diode.

Part Context

This device belongs to the STMicroelectronics IH2 series of high-voltage IGBTs. The series utilizes proprietary trench gate field-stop technology designed to balance conduction and switching losses. It targets efficiency improvements in single-switch quasi-resonant converters operating within specific frequency ranges.

Replacement Considerations

STGWA35IH135DF2: Higher current rating (35 A). STGWA30IH160DF2: Higher voltage rating (1600 V). STGW28IH125DF: Lower voltage rating (1250 V). Verify pinout compatibility and thermal characteristics before substitution.

FAQ

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 1.7 V when measured at a collector current of 20 A.

Does the device include an integrated freewheeling diode?

Yes, it includes a co-packaged diode with a forward voltage of 1.15 V at 20 A.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175 °C.

STGWA25IH135DF2STGWA25IH135DF2
$3.00
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