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The STGWA25IH135DF2 is a trench gate field-stop IGBT from the IH2 series, rated at 1350 V and 25 A. It features a collector-emitter saturation voltage of 1.7 V typical at 20 A and a maximum junction temperature of 175 °C. The device includes a co-packaged diode with a forward voltage of 1.15 V at 20 A. Thermal resistance from junction to case is 0.36 °C/W for the IGBT and 0.97 °C/W for the diode. Total power dissipation reaches 340 W at 25 °C case temperature.
Verify the specific ordering code against the manufacturer's official documentation to ensure correct component selection. Confirm package type and environmental compliance grades prior to purchase. Check for any recent datasheet revisions that may impact electrical ratings or thermal performance specifications.
Select this component for high-voltage resonant topologies requiring optimized soft-switching performance. Ensure the design accommodates the 1350 V rating and 175 °C maximum junction temperature. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values for both the IGBT and the integrated diode.
This device belongs to the STMicroelectronics IH2 series of high-voltage IGBTs. The series utilizes proprietary trench gate field-stop technology designed to balance conduction and switching losses. It targets efficiency improvements in single-switch quasi-resonant converters operating within specific frequency ranges.
STGWA35IH135DF2: Higher current rating (35 A). STGWA30IH160DF2: Higher voltage rating (1600 V). STGW28IH125DF: Lower voltage rating (1250 V). Verify pinout compatibility and thermal characteristics before substitution.
The typical VCE(sat) is 1.7 V when measured at a collector current of 20 A.
Yes, it includes a co-packaged diode with a forward voltage of 1.15 V at 20 A.
The maximum operating junction temperature is 175 °C.