STGWA25S120DF3

$2.90

Description：IGBT TRENCH FS 1200V 50A TO-247
Series：-

SKU:eb479add2c01 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 50A TO-247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
Power - Max：375 W
Switching Energy：830µJ (on), 2.37mJ (off)
Input Type：Standard
Gate Charge：80 nC
Td (on/off) @ 25°C：31ns/147ns
Test Condition：600V, 25A, 15Ohm, 15V
Reverse Recovery Time (trr)：265 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGWA25S120DF3

Overview

The STGWA25S120DF3 is a single IGBT from the M-Series, utilizing trench gate field-stop technology. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 25 A at 25°C, with a pulsed current rating of 50 A. The device operates within a junction temperature range of -55°C to 175°C and dissipates up to 375 W in a TO-247-3 package. Key electrical parameters include a typical saturation voltage of 1.85 V at 25 A, a gate charge of 85 nC, and switching times of 28 ns (turn-on) and 150 ns (turn-off) under standard test conditions.

Feature Summary

Trench gate field-stop structure for low conduction losses
Positive VCE(sat) temperature coefficient for safe paralleling
10 µs short-circuit withstand capability
Soft and fast-recovery antiparallel diode

Applications

Industrial motor drives
Inverter systems requiring high efficiency
Power supplies and converters

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as specified in official documentation. Check for end-of-life notices or obsolescence warnings prior to final design approval. Ensure proper handling procedures are followed during storage and assembly to maintain device integrity.

Selection Notes

Select this component for applications demanding low loss and robust short-circuit protection. The tight parameter distribution facilitates reliable parallel operation. Consider thermal management requirements given the 375 W power dissipation rating. Verify compatibility with existing gate drive circuits regarding the 85 nC gate charge requirement.

Part Context

This part belongs to STMicroelectronics' M-Series IGBT lineup, designed for optimal balance between performance and efficiency. The series emphasizes low-loss operation and short-circuit functionality, making it suitable for demanding industrial and energy conversion applications where reliability is critical.