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The STGWA30H65DFB is a trench gate field-stop IGBT from the HB series, rated at 650 V collector-emitter voltage and 30 A continuous collector current. It utilizes an advanced proprietary structure to optimize conduction and switching performance. The device features a low saturation voltage of 1.6 V typical at 30 A and supports a maximum junction temperature of 175 °C. Packaged in TO-247 long leads for through-hole mounting, it includes a co-packaged antiparallel diode with very fast soft recovery characteristics.
Verify the exact suffix against official STMicroelectronics documentation to confirm pinout and package variations. Ensure the procurement channel provides valid RoHS compliance certificates. Cross-reference the specific part number with the latest datasheet revision to confirm active status and any recent product change notifications.
Select this component when a balance between low conduction loss and fast switching speed is required in 650 V applications. The positive temperature coefficient facilitates parallel operation without complex current sharing circuits. Consider the thermal resistance and package constraints of the TO-247 long lead form factor during PCB layout.
This IGBT belongs to the HB series, representing an evolution of STMicroelectronics' trench gate field-stop technology. It is designed to maximize efficiency in frequency converters by offering an optimum compromise between conduction and switching losses compared to previous generation devices.
STGWA30HP65FB2: Similar HB2 series IGBT with comparable ratings but potentially different switching characteristics or package nuances.