STGWA30H65DFB2

STGWA30H65DFB2

$3.42
  • Description:IGBT TRENCH FS 650V 50A TO247
  • Series:-

SKU:7fde1fad87ab Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 50A TO247
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):50 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 30A
  • Power - Max:167 W
  • Switching Energy:270µJ (on), 310µJ (off)
  • Input Type:Standard
  • Gate Charge:90 nC
  • Td (on/off) @ 25°C:18.4ns/71ns
  • Test Condition:400V, 30A, 6.8Ohm, 15V
  • Reverse Recovery Time (trr):115 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 Long Leads
  • Grade:-
  • Qualification:-

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STGWA30H65DFB2

Overview

The STGWA30H65DFB2 is a trench gate field-stop IGBT from the HB2 series, rated at 650 V and 30 A. It utilizes an advanced proprietary structure to optimize conduction performance through improved VCE(sat) behavior at low currents and reduced switching energy. The device features a co-packaged protection diode for fast applications. Key electrical parameters include a maximum junction temperature of 175 °C, a typical saturation voltage of 1.65 V at 30 A, and a positive VCE(sat) temperature coefficient. It is housed in a TO-247 long leads package.

Feature Summary

  • Advanced trench gate field-stop structure for optimized conduction and switching efficiency
  • Co-packaged protection diode designed for high-speed application requirements
  • Positive VCE(sat) temperature coefficient enabling safer paralleling operation

Applications

  • High-efficiency frequency converters
  • Fast-switching power supply topologies
  • Industrial motor drives requiring minimized tail current

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number with official datasheets and product change notifications. Ensure the ordering suffix matches the required package variant. Confirm RoHS compliance status through the latest regulatory documentation provided by the manufacturer before finalizing procurement specifications.

Selection Notes

Select this component when designing circuits that require a balance of low conduction losses at partial loads and high switching speeds. The integrated anti-parallel diode simplifies design for half-bridge configurations. Verify thermal management capabilities against the specified maximum junction temperature and thermal resistance values for the intended operating environment.

Part Context

This device belongs to the HB2 series of IGBTs, representing an evolution of the trench gate field-stop technology. It shares architectural similarities with other HB2 models like the STGWA50H65DFB2 but is specifically rated for 30 A continuous collector current. The series focuses on maximizing efficiency through tight parameter distribution and minimized tail current characteristics.

Replacement Considerations

Direct functional substitutes within the same series include the STGWA30HP65FB2, which shares identical electrical ratings and package type. Designers should verify pinout compatibility and thermal interface requirements when transitioning between these specific part numbers.

STGWA30H65DFB2STGWA30H65DFB2
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