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The STGWA30HP65FB is a trench gate field-stop IGBT from the HB2 series, manufactured by STMicroelectronics. It features an N-channel configuration housed in a TO-247 package with three pins for through-hole installation. The device supports a maximum continuous collector current of 30 A and a collector-emitter voltage rating of 650 V. Key electrical parameters include a maximum power dissipation of 260 W, a typical collector-emitter saturation voltage of 1.65 V at 30 A, and a maximum gate-emitter voltage of 20 V. It operates within a temperature range of -55°C to 175°C, offering a switching speed of 1 MHz.
Verify the specific suffix 'FB' against official STMicroelectronics documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides genuine components with traceable manufacturing dates. Cross-reference the RoHS compliance status and Ecopack2 packaging details with the latest datasheet revisions before finalizing orders.
Select this component when designing circuits requiring a balance between low conduction loss and fast switching speeds. The 650V rating suits medium-voltage applications, while the 30A current capacity fits moderate power levels. Consider the TO-247 package for effective heat dissipation in through-hole designs without complex mounting requirements.
This part belongs to the STG series of IGBTs, specifically the HB2 family which represents an evolution of trench gate technology. It is distinct from other variants like the STGWA30HP65FB2 or STGW30M65DF2 due to its specific packaging and performance optimization for high-frequency operations.
Direct substitutes may include the STGWA30HP65FB2 if the long-lead TO-247 package variant is acceptable. Verify compatibility with existing PCB footprints and thermal management solutions when considering alternative models from the same manufacturer.