STGWA30HP65FB

STGWA30HP65FB

$1.45
  • Description:IGBT TRENCH FS 650V 60A TO247
  • Series:HB

SKU:1d4bd4d42265 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 60A TO247
  • Series:HB
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 30A
  • Power - Max:260 W
  • Switching Energy:293µJ (off)
  • Input Type:Standard
  • Gate Charge:149 nC
  • Td (on/off) @ 25°C:-/146ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):140 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 Long Leads
  • Grade:-
  • Qualification:-

Download product information

STGWA30HP65FB

Overview

The STGWA30HP65FB is a trench gate field-stop IGBT from the HB2 series, manufactured by STMicroelectronics. It features an N-channel configuration housed in a TO-247 package with three pins for through-hole installation. The device supports a maximum continuous collector current of 30 A and a collector-emitter voltage rating of 650 V. Key electrical parameters include a maximum power dissipation of 260 W, a typical collector-emitter saturation voltage of 1.65 V at 30 A, and a maximum gate-emitter voltage of 20 V. It operates within a temperature range of -55°C to 175°C, offering a switching speed of 1 MHz.

Feature Summary

  • Advanced proprietary trench gate field-stop structure optimized for low conduction losses and reduced switching energy.
  • Co-packaged protection diode integrated with the IGBT to minimize tail current and maximize efficiency in fast applications.
  • Positive VCE(sat) temperature coefficient ensures safer parallel operation with tight parameter distribution.

Applications

  • High-speed industrial motor drives
  • Switch-mode power supplies
  • Inverter systems requiring high efficiency

Procurement Notes

Verify the specific suffix 'FB' against official STMicroelectronics documentation to confirm pinout and thermal characteristics. Ensure the procurement channel provides genuine components with traceable manufacturing dates. Cross-reference the RoHS compliance status and Ecopack2 packaging details with the latest datasheet revisions before finalizing orders.

Selection Notes

Select this component when designing circuits requiring a balance between low conduction loss and fast switching speeds. The 650V rating suits medium-voltage applications, while the 30A current capacity fits moderate power levels. Consider the TO-247 package for effective heat dissipation in through-hole designs without complex mounting requirements.

Part Context

This part belongs to the STG series of IGBTs, specifically the HB2 family which represents an evolution of trench gate technology. It is distinct from other variants like the STGWA30HP65FB2 or STGW30M65DF2 due to its specific packaging and performance optimization for high-frequency operations.

Replacement Considerations

Direct substitutes may include the STGWA30HP65FB2 if the long-lead TO-247 package variant is acceptable. Verify compatibility with existing PCB footprints and thermal management solutions when considering alternative models from the same manufacturer.

STGWA30HP65FBSTGWA30HP65FB
$1.45
Buy Now