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The STGWA30IH65DF is a 650 V, 30 A soft-switching IGBT from the IH series, utilizing an advanced trench gate field-stop structure. It features a typical collector-emitter saturation voltage of 1.55 V at 30 A and includes a co-packaged freewheeling diode with low forward drop. The device supports a maximum junction temperature of 175 °C and offers a continuous collector current of 60 A at 25 °C case temperature. Key electrical parameters include a breakdown voltage of 650 V, a total gate charge of 80 nC, and a thermal resistance junction-to-case of 0.83 °C/W for the IGBT.
Verify component authenticity by checking the marking code G30IH65DF against official datasheets. Confirm package type matches TO-247 long leads specifications. Ensure environmental compliance aligns with project requirements using ECOPACK standards. Cross-reference ordering codes with manufacturer documentation to avoid counterfeit components.
Select this component for designs requiring optimized conduction and switching losses specifically in soft-switching topologies. Consider the tight parameter distribution for reliable parallel operation. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values under varying case temperatures.
This part belongs to the STMicroelectronics IH series, designed for high-efficiency soft-switching applications. It complements other IGBTs in the portfolio by focusing on minimized tail current and low saturation voltage characteristics suitable for resonant loads.
Direct substitutes within the same family include STGWA50IH65DF for higher current capacity in similar soft-switching applications.