STGWA35IH135DF2

$3.29

Description：IGBT TRENCH FS 1350V 70A TO247
Series：-

SKU:6483f6291d45 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1350V 70A TO247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1350 V
Current - Collector (Ic) (Max)：70 A
Current - Collector Pulsed (Icm)：140 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 30A
Power - Max：416 W
Switching Energy：1.6mJ (off)
Input Type：Standard
Gate Charge：258 nC
Td (on/off) @ 25°C：-
Test Condition：600V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 Long Leads
Grade：-
Qualification：-

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STGWA35IH135DF2

Overview

The STGWA35IH135DF2 is a 1350 V, 35 A IGBT from the IH2 series, utilizing trench gate field-stop technology for soft commutation. It features a TO-247 long leads package with a maximum junction temperature of 175 °C. Key electrical parameters include a collector-emitter saturation voltage (VCE(sat)) of 1.7 V typical at IC = 30 A and a forward on-voltage (VF) of 1.25 V at IF = 30 A. Thermal resistance from junction to case is 0.36 °C/W for the IGBT and 0.97 °C/W for the diode. The device supports a continuous collector current of 70 A at TC = 25 °C and includes a co-packaged freewheeling diode with low drop and soft recovery characteristics.

Feature Summary

Advanced trench gate field-stop structure optimized for conduction and switching losses in soft commutation applications.
Co-packaged freewheeling diode featuring very low forward voltage drop and soft recovery properties.
Positive VCE(sat) temperature coefficient and tight parameter distribution enabling safer paralleling operation.

Applications

Induction heating systems
Resonant converters
Microwave ovens

Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet to ensure correct component selection. Confirm that the TO-247 long leads package matches the intended PCB footprint and mounting requirements. Check for any updated revision history or environmental compliance specifications before finalizing procurement orders.

Selection Notes

Select this component for high-voltage resonant and soft-switching topologies requiring efficient thermal management. Ensure the gate drive circuit accommodates the specified ±20 V gate-emitter voltage limits. Consider the thermal resistance values when designing heatsinking solutions to maintain the junction temperature within the 175 °C maximum operating range under expected load conditions.

Part Context

This device belongs to the STMicroelectronics IH2 series of IGBTs, which are engineered using proprietary trench gate field-stop architecture. The series targets high-efficiency performance in power conversion applications by minimizing tail current and optimizing switching energy losses compared to standard planar technologies.

Replacement Considerations

Direct substitutes within the same voltage and current ratings should be evaluated based on matching VCE(sat), switching energy, and thermal resistance specifications. Verify pinout compatibility and package dimensions to ensure seamless integration without modifying the existing printed circuit board layout.