STGWA40H65DFB2

Overview

The STGWA40H65DFB2 is a high-speed IGBT from the HB2 series, utilizing a trench gate field-stop structure in a TO-247 long leads package. It features a collector-emitter voltage of 650 V and a continuous collector current of 40 A at 25 °C case temperature. The device includes a co-packaged antiparallel diode with a forward current rating of 60 A. Key electrical parameters include a typical saturation voltage of 1.55 V at 40 A, a maximum junction temperature of 175 °C, and a thermal resistance (junction-to-case) of 0.65 °C/W for the IGBT.

Feature Summary

• Optimized conduction performance through improved VCE(sat) behavior at low currents and reduced switching energy.
• Co-packaged very fast soft recovery diode designed to maximize efficiency in fast applications.
• Minimized tail current and tight parameter distribution ensuring safer paralleling operation.
• Positive VCE(sat) temperature coefficient supporting stable thermal management.

Applications

• Welding
• PFC converters - single phase input
• Solar inverters (string and central)
• Uninterruptable power supplies (UPS)
• EV charging - DC fast charging stations

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the TO-247 long leads package dimensions align with the target PCB footprint and mounting requirements. Ensure thermal interface materials are selected to maintain junction temperatures within the specified 175 °C maximum limit under expected operating loads.

Selection Notes

Select this component for applications requiring high switching speeds and low conduction losses at moderate current levels. Consider the 650 V rating for systems operating near this voltage threshold. Evaluate the thermal resistance values to determine appropriate heatsinking solutions. Verify compatibility with gate drive voltages, specifically the ±20 V absolute maximum rating, to ensure reliable switching performance.

Part Context

This part belongs to the STGWA series of trench gate field-stop IGBTs. It represents an evolution in the HB2 series, focusing on enhanced efficiency for fast-switching applications. The device integrates a high-performance diode, distinguishing it from standard IGBTs without integrated freewheeling diodes. It is designed for robust performance in industrial and renewable energy conversion systems.

Replacement Considerations

Direct replacements within the same family include STGWA30H65DFB2 and STGWA100H65DFB2, which share similar packaging and technology but differ in current ratings. Cross-series comparisons should account for variations in switching energy and saturation voltage characteristics.

FAQ

What is the maximum pulsed collector current for the STGWA40H65DFB2?

The maximum pulsed collector current is 160 A, provided the pulse duration is less than or equal to 1 μs and the junction temperature remains below 175 °C.

How does the device handle reverse recovery during switching?

The co-packaged diode features a very fast soft recovery characteristic, with a typical reverse recovery time of 75 ns and a reverse recovery charge of 730 nC at 40 A and 400 V.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is 0.65 °C/W for the IGBT and 1.14 °C/W for the integrated diode.