SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGWA40HP65FB2 is a high-speed N-channel IGBT from the HB2 series, utilizing an advanced trench gate field-stop structure. It features a collector-emitter voltage of 650 V and a continuous collector current of 72 A at 25 °C case temperature. The device operates with a maximum junction temperature of 175 °C and includes a co-packaged protection diode. Key electrical parameters include a typical saturation voltage of 1.55 V at 40 A, a total gate charge of 153 nC, and a turn-off switching energy of 410 µJ under standard test conditions.
Verify component authenticity by cross-referencing the marking code G40HP65FB2 against official STMicroelectronics documentation. Confirm package type matches TO-247 long leads specifications. Ensure environmental compliance aligns with ECOPACK standards required for the specific application environment before finalizing procurement orders.
Select this component when designing systems requiring high efficiency in fast-switching applications. The HB2 series offers improved low-current VCE(sat) behavior compared to previous generations. Consider the thermal resistance values and power dissipation limits relative to the expected operating case temperatures to ensure reliable performance within the specified junction temperature range.
This device belongs to the STGWA HP65 FB2 product family, representing an evolution of STMicroelectronics' proprietary trench gate technology. It is part of the broader HB2 series lineup, which shares similar structural characteristics but varies in current ratings. The TO-247 long leads package provides robust mechanical stability and efficient heat dissipation capabilities for industrial power electronics.
STGWA50HP65FB2
The co-packaged diode is included solely for protection purposes within the circuit design.
It enables safer and more stable operation when multiple devices are connected in parallel.
The maximum operating junction temperature is 175 °C.