STGWA40HP65FB2

STGWA40HP65FB2

$4.30
  • Description:IGBT TRENCH FS 650V 72A TO247
  • Series:HB2

SKU:d5843e04131f Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 650V 72A TO247
  • Series:HB2
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):72 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 40A
  • Power - Max:227 W
  • Switching Energy:410µJ (off)
  • Input Type:Standard
  • Gate Charge:153 nC
  • Td (on/off) @ 25°C:-/125ns
  • Test Condition:400V, 40A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr):140 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247 Long Leads
  • Grade:-
  • Qualification:-

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STGWA40HP65FB2

Overview

The STGWA40HP65FB2 is a high-speed N-channel IGBT from the HB2 series, utilizing an advanced trench gate field-stop structure. It features a collector-emitter voltage of 650 V and a continuous collector current of 72 A at 25 °C case temperature. The device operates with a maximum junction temperature of 175 °C and includes a co-packaged protection diode. Key electrical parameters include a typical saturation voltage of 1.55 V at 40 A, a total gate charge of 153 nC, and a turn-off switching energy of 410 µJ under standard test conditions.

Feature Summary

  • Advanced trench gate field-stop structure for optimized conduction and reduced switching energy
  • Co-packaged antiparallel diode designed specifically for protection purposes
  • Minimized tail current and tight parameter distribution for safer paralleling operation
  • Positive VCE(sat) temperature coefficient to facilitate stable parallel configurations

Applications

  • Welding equipment
  • Power factor correction circuits

Procurement Notes

Verify component authenticity by cross-referencing the marking code G40HP65FB2 against official STMicroelectronics documentation. Confirm package type matches TO-247 long leads specifications. Ensure environmental compliance aligns with ECOPACK standards required for the specific application environment before finalizing procurement orders.

Selection Notes

Select this component when designing systems requiring high efficiency in fast-switching applications. The HB2 series offers improved low-current VCE(sat) behavior compared to previous generations. Consider the thermal resistance values and power dissipation limits relative to the expected operating case temperatures to ensure reliable performance within the specified junction temperature range.

Part Context

This device belongs to the STGWA HP65 FB2 product family, representing an evolution of STMicroelectronics' proprietary trench gate technology. It is part of the broader HB2 series lineup, which shares similar structural characteristics but varies in current ratings. The TO-247 long leads package provides robust mechanical stability and efficient heat dissipation capabilities for industrial power electronics.

Replacement Considerations

STGWA50HP65FB2

FAQ

What is the primary function of the co-packaged diode?

The co-packaged diode is included solely for protection purposes within the circuit design.

How does the positive VCE(sat) temperature coefficient benefit the design?

It enables safer and more stable operation when multiple devices are connected in parallel.

What is the maximum allowable junction temperature for this IGBT?

The maximum operating junction temperature is 175 °C.

STGWA40HP65FB2STGWA40HP65FB2
$4.30
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