STGWA40M120DF3

Overview

The STGWA40M120DF3 is a trench gate field-stop IGBT from the M series, rated at 1200 V and 40 A. It features a maximum junction temperature of 175 °C and a minimum short-circuit withstand time of 10 μs. The typical collector-emitter saturation voltage (VCE(sat)) is 1.85 V at IC = 40 A. The device utilizes an advanced proprietary trench gate field-stop structure to balance inverter system performance and efficiency. It exhibits a positive VCE(sat) temperature coefficient and tight parameter distribution for safer paralleling operation.

Feature Summary

• Advanced trench gate field-stop structure for low-loss operation
• Positive VCE(sat) temperature coefficient enabling safe paralleling
• Soft and very fast-recovery antiparallel diode

Applications

• Industrial motor control
• Inverter systems requiring high efficiency
• Switching power supplies

Procurement Notes

Verify the specific suffix 'DF3' against the manufacturer's current datasheet to confirm package type and pinout compatibility. Ensure the ordering part number matches the exact electrical ratings required for the target application circuit design.

Selection Notes

Select this component when a balance between low conduction loss and robust short-circuit capability is required. The tight parameter distribution makes it suitable for parallel configurations where current sharing accuracy is critical for system reliability.

Part Context

This device belongs to the M series of IGBTs developed by STMicroelectronics. The series is characterized by optimized trade-offs between switching losses and conduction losses, targeting high-performance industrial applications.

Replacement Considerations

Check for direct substitutes within the same M series family with identical voltage and current ratings. Verify that any replacement maintains the same TO-247 long lead package and thermal characteristics.