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The STGWA40S120DF3 is an automotive-grade trench gate field-stop IGBT from the MS series, designed for low-loss applications. It features a collector-emitter maximum voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 80 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 1.95 V. It operates within a junction temperature range of -55°C to +175°C and supports a power dissipation (Pd) of 536 W. The component is housed in a TO-247-3 through-hole package and holds AEC-Q101 qualification.
Verify the specific suffix AG against official STMicroelectronics documentation to confirm automotive compliance and parameter tolerances. Ensure the ordering part number matches the exact electrical characteristics required for the target application circuit design.
Select this component when high current handling up to 80 A and robust short-circuit withstand capability are required in automotive environments. Consider the thermal resistance and package type TO-247-3 for appropriate heatsinking solutions to maintain junction temperatures within the specified operational limits.
This IGBT belongs to the MS series, which balances performance and efficiency. It utilizes advanced trench gate field-stop technology to minimize switching and conduction losses, making it suitable for high-frequency power conversion systems where energy efficiency is critical.
STGW25S120DF3 offers similar technology but lower current ratings. STGWA40M120DF3 is a non-automotive M-series alternative with comparable voltage and current specifications.