STGWA50M65DF2AG

Overview

The STGWA50M65DF2AG is an automotive-grade trench gate field-stop IGBT from the M series, rated at 650 V and 50 A. It features a collector-emitter saturation voltage of 1.7 V (typ.) at 50 A and supports a maximum junction temperature of 175 °C. The device includes a soft and very fast-recovery antiparallel diode with a forward on-voltage of 2.1 V (typ.) at 50 A. Electrical ratings include a continuous collector current of 119 A at 25 °C case temperature and a minimum short-circuit withstand time of 6 μs. It is housed in a TO-247 long leads package.

Feature Summary

• AEC-Q101 qualified for automotive reliability
• Advanced proprietary trench gate field-stop structure for low-loss performance
• Positive VCE(sat) temperature coefficient enabling safer paralleling operation
• Minimized tail current and tight parameter distribution

Applications

• Automotive motor control
• e-compressor systems
• Heating system inverters

Procurement Notes

Verify component authenticity by checking the marking code G50M65DF2AG against official datasheet specifications. Confirm the package type is TO-247 long leads and ensure the ordering suffix AG corresponds to the required environmental compliance grade. Cross-reference the document revision DS14599 Rev 4 to guarantee alignment with the latest electrical characteristics and absolute maximum ratings provided by the manufacturer.

Selection Notes

Select this component for designs requiring high thermal stability up to 175 °C and robust short-circuit protection. The positive temperature coefficient of VCE(sat) facilitates parallel operation without active current balancing. Ensure the gate drive circuit accommodates the total gate charge of 147 nC and that the thermal management solution maintains the junction-to-case resistance within the specified 0.26 °C/W limit for optimal efficiency.

Part Context

This device belongs to the STMicroelectronics M series of trench gate field-stop IGBTs, designed to balance inverter system performance and efficiency. It shares structural similarities with other M series parts like the STGWA30HP65FB2 but offers higher current handling capabilities. The 'AG' suffix indicates specific packaging and environmental compliance standards distinct from non-qualified variants.

Replacement Considerations

Direct substitutes within the same family include the STGWA50M65DF2, which lacks the automotive qualification suffix. For lower current applications, the STGW30M65DF2 may be considered if pin compatibility and thermal constraints allow. Verify that any replacement maintains the required AEC-Q101 qualification if automotive reliability is mandatory.

FAQ

What is the minimum short-circuit withstand time for the STGWA50M65DF2AG?

The device has a minimum short-circuit withstand time of 6 μs, tested at VCC = 400 V, VGE = 15 V, and starting TJ ≤ 150°C.

How does the VCE(sat) behave with temperature changes?

The STGWA50M65DF2AG exhibits a positive VCE(sat) temperature coefficient, which increases from 1.7 V (typ.) at 25 °C to 2.1 V (typ.) at 175 °C at IC = 50 A.

What are the dynamic switching energy values at 175 °C?

At TJ = 175 °C, VCC = 400 V, IC = 50 A, and RG = 6.8 Ω, the typical turn-on energy (Eon) is 2.5 mJ and the typical turn-off energy (Eoff) is 2.6 mJ.