STGWA60H65DFB

$4.11

Description：IGBT TRENCH FS 650V 80A TO-247-3
Series：-

SKU:48bde77bf88e Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO-247-3
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：240 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 60A
Power - Max：375 W
Switching Energy：1.59mJ (on), 900µJ (off)
Input Type：Standard
Gate Charge：306 nC
Td (on/off) @ 25°C：66ns/210ns
Test Condition：400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr)：60 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGWA60H65DFB

Overview

The STGWA60H65DFB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the HB series, manufactured by STMicroelectronics. It utilizes an advanced trench gate field-stop structure and is housed in a TO-247 package with through-hole mounting. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 60 A at 25°C. Key electrical parameters include a typical saturation voltage of 1.6 V at 60 A, a maximum power dissipation of 375 W, and a junction temperature range from -55°C to +175°C.

Feature Summary

Advanced trench gate field-stop technology for optimized efficiency
High-speed switching characteristics with minimized tail current
Positive temperature coefficient for safe parallel operation

Applications

Frequency converters
Uninterruptible power supplies
Welding machines
Photovoltaic inverters
Power factor correction circuits

Procurement Notes

Verify the specific suffix 'A' against official datasheets to confirm pinout or thermal pad variations. Ensure the procurement channel provides original manufacturer documentation. Cross-reference the RoHS compliance status with the latest product change notifications. Confirm the package type matches the required PCB footprint before ordering.

Selection Notes

Select this component for applications requiring high switching speeds and low conduction losses. The positive VCE(sat) temperature coefficient facilitates reliable paralleling for higher current capacity. Verify that the operating junction temperature does not exceed 175°C. Ensure the gate drive voltage remains within the specified ±20 V limits to prevent device damage.

Part Context

This part belongs to the HB series of IGBTs developed using proprietary trench gate field-stop technology. It represents an optimization between conduction and switching losses to maximize frequency converter efficiency. The series features tight parameter distribution and very fast soft recovery antiparallel diodes for enhanced performance.