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Product Detailed Parameters
- Description：IGBT 600V 130A TO247
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：130 A
- Current - Collector Pulsed (Icm)：250 A
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 40A
- Power - Max：340 W
- Switching Energy：743µJ (on), 560µJ (off)
- Input Type：Standard
- Gate Charge：195 nC
- Td (on/off) @ 25°C：40ns/240ns
- Test Condition：390V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA60NC60WDR is a 600 V, ultrafast IGBT utilizing the Power MESH™ process. It features a TO-247 long leads package with three terminals. Key electrical ratings include a collector-emitter voltage of 600 V and a continuous collector current of 60 A at TC = 100 °C. The device exhibits a maximum collector-emitter saturation voltage of 2.6 V at IC = 40 A and TC = 125 °C. Total switching losses reach 1545 µJ at TC = 125 °C under inductive load conditions. Thermal resistance from junction to case is 0.35 °C/W for the IGBT and 1.25 °C/W for the diode.
Feature Summary
- Very high frequency operation capability
- Low CRES / CIES ratio preventing cross-conduction susceptibility
- Integrated very soft ultrafast recovery antiparallel diode
Applications
- Welding equipment
- Power factor correction circuits
- Switched-mode power supplies (SMPS)
- High frequency inverter/converter systems
Procurement Notes
Verify the specific ordering code matches the required suffix configuration before procurement. Confirm that the TO-247 long leads packaging aligns with the target board layout requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values during operation.
Selection Notes
Select this component for designs requiring high-frequency switching performance combined with low on-state behavior. Evaluate the trade-off between switching losses and saturation voltage based on the operating temperature range. Consider the integrated diode characteristics when designing freewheeling paths in converter topologies.
Part Context
This device belongs to the STMicroelectronics ultrafast IGBT family designed using advanced Power MESH™ technology. It is housed in a TO-247 long leads package suitable for through-hole mounting. The product line emphasizes high current capability and optimized switching dynamics for industrial power conversion applications.
Replacement Considerations
STGW30NC60WD
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage is 600 V.
Does the device include an integrated diode?
Yes, it includes a co-packaged very soft ultrafast recovery antiparallel diode.
What is the gate-emitter voltage rating?
The absolute maximum gate-emitter voltage rating is ± 20 V.
