STGWA80H65DFBAG

$5.96

Description：IGBT TRENCH FS 650V 120A TO247
Series：-

SKU:39db579d9c42 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 120A TO247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：120 A
Current - Collector Pulsed (Icm)：240 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 80A
Power - Max：535 W
Switching Energy：3.26mJ (on), 2.33mJ (off)
Input Type：Standard
Gate Charge：453 nC
Td (on/off) @ 25°C：-/360ns
Test Condition：400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr)：64 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 Long Leads
Grade：Automotive
Qualification：AEC-Q101

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STGWA80H65DFBAG

Overview

The STGWA80H65DFBAG is an automotive-grade IGBT from the HB series, utilizing a trench gate field-stop structure. It features a 650 V collector-emitter voltage and an 80 A continuous collector current at 100 °C case temperature. The device operates with a maximum junction temperature of 175 °C and includes a co-packaged antiparallel diode. Key electrical parameters include a typical VCE(sat) of 1.65 V at 80 A, a total power dissipation of 535 W at 25 °C, and a thermal resistance (junction-to-case) of 0.28 °C/W for the IGBT. It is housed in a TO-247 long leads package.

Feature Summary

AEC-Q101 qualified for automotive reliability
High-speed switching with minimized tail current
Positive VCE(sat) temperature coefficient for safe paralleling
Soft and very fast recovery antiparallel diode

Applications

Power Factor Correction (PFC)
High frequency converters

Procurement Notes

Verify component authenticity by checking the marking code G80H65DFBAG against the datasheet specifications. Confirm the package type is TO-247 long leads and ensure the ordering suffix matches the required automotive grade qualification. Cross-reference the document revision DS14160 Rev 1 to guarantee technical data alignment.

Selection Notes

Select this component for applications requiring high efficiency in frequency converters where switching losses must be minimized. The tight parameter distribution supports safer parallel operation. Ensure the design accommodates the 175 °C maximum junction temperature and utilizes the Kelvin pin configuration if available in the specific PCB layout variant.

Part Context

This part belongs to the HB series of IGBTs developed using advanced proprietary trench gate field-stop technology. It represents an evolution in balancing conduction and switching losses to maximize converter efficiency. The device is specifically engineered for demanding automotive environments requiring robust performance under high thermal stress.

Replacement Considerations

Direct substitutes within the same family include the STGW80H65DFB-4. Verify compatibility regarding package dimensions and electrical characteristics before substitution.