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The STGWA8M120DF3 is a trench gate field-stop IGBT from the M series, rated at 1200 V and 8 A. It features a low saturation voltage of 1.85 V (typ.) at 8 A and supports a maximum junction temperature of 175 °C. The device provides 10 µs of short-circuit withstand time and exhibits a positive VCE(sat) temperature coefficient with tight parameter distribution for safe paralleling. It utilizes a TO-247 long lead package.
Verify the specific ordering suffix to confirm the exact package variant and tape-and-reel or tube packaging configuration. Confirm RoHS compliance status and ensure the component matches the required thermal resistance specifications for the target application design.
Select this component for applications requiring high efficiency and robust short-circuit protection. The positive temperature coefficient facilitates parallel operation without current balancing circuits. Ensure the drive circuit can handle the gate charge requirements for optimal switching performance.
This part belongs to the STMicroelectronics M-series IGBT family, which emphasizes low loss and short-circuit functionality. It shares core technology with other variants like the STGWA25M120DF3 but is optimized for lower current ratings in compact designs.
Direct substitutes within the same M-series family include STGWA6M120DF3 or STGWA10M120DF3 if current ratings differ slightly. Verify pinout compatibility and thermal characteristics before substitution.