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Product Detailed Parameters
- Description：IGBT 600V 35A 79W TO3P
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：35 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 20A
- Power - Max：79 W
- Switching Energy：300µJ (on), 1.28mJ (off)
- Input Type：Standard
- Gate Charge：96 nC
- Td (on/off) @ 25°C：21.5ns/180ns
- Test Condition：480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWF30NC60S is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a collector-emitter voltage rating of 600 V and a continuous collector current of 35 A at 25 °C. The device utilizes silicon technology and is housed in a TO-3PF through-hole package. Key electrical characteristics include a maximum gate-emitter voltage of ±20 V, a collector-emitter saturation voltage of 1.5 V, and a total power dissipation of 79 W. The component operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Single IGBT configuration with integrated ultra-fast recovery antiparallel diode
- Optimized for high-frequency operation up to 50 kHz
- Advanced PowerMESH process ensuring low on-state voltage drop
Applications
- High frequency motor controls
- Switching mode power supplies (SMPS)
- Power factor correction (PFC) circuits
- Resonant converter topologies
Procurement Notes
Verify the specific ordering suffix and revision level against the manufacturer's latest datasheet before procurement. Confirm that the TO-3PF package dimensions match the target PCB footprint. Ensure thermal management solutions are compatible with the specified 79 W power dissipation rating under intended operating conditions.
Selection Notes
Select this component for designs requiring a 600 V blocking capability with a 35 A current rating. The 1.5 V saturation voltage supports efficient conduction in moderate switching frequencies. Evaluate the thermal resistance parameters to ensure adequate heat sinking for the TO-3PF package in the final assembly environment.
Part Context
This part belongs to the STGWF series of fast IGBTs from STMicroelectronics. It is designed using the PowerMESH technology to balance switching performance and conduction losses. The series targets applications demanding high reliability and efficiency in power conversion systems.
Replacement Considerations
Direct substitutes may include other 600 V, 30-35 A IGBTs in TO-3PF packages from STMicroelectronics or other manufacturers. Verify pinout compatibility and thermal characteristics when considering alternatives.
