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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 60A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：383µJ (on), 293µJ (off)
- Input Type：Standard
- Gate Charge：149 nC
- Td (on/off) @ 25°C：37ns/146ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：53 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT30H60DFB is a high-speed N-channel IGBT from the HB series, utilizing an advanced trench gate field-stop structure. It features a collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 30 A at 25°C. The device operates with a maximum junction temperature of 175°C and offers a typical saturation voltage (VCE(sat)) of 1.55 V at rated current. Packaged in a TO-247 through-hole housing, it integrates a very fast soft recovery antiparallel diode to minimize switching losses.
Feature Summary
- Advanced trench gate field-stop technology for optimized conduction and switching performance
- Positive VCE(sat) temperature coefficient enabling safe parallel operation
- Very fast soft recovery antiparallel diode for minimized tail current
Applications
- High frequency AC/DC and DC/AC converters
- Motor drive applications
- Switching power supplies
Procurement Notes
Verify the specific suffix 'DFB' against the manufacturer's latest datasheet to confirm pinout compatibility and package dimensions. Check for any Product Change Notifications (PCNs) regarding material or process updates. Ensure the component meets RoHS standards if required by the design specifications before finalizing procurement.
Selection Notes
Select this component when balancing low conduction loss with high switching speed is critical. The tight parameter distribution supports reliable paralleling for higher current requirements. Verify that the thermal resistance characteristics fit the system's heat dissipation capabilities and that the 600V rating provides adequate margin for the application's voltage spikes.
Part Context
This part belongs to STMicroelectronics' HB series, designed specifically for high-frequency converters. It complements other variants like the STGWT30V60DF and STGW20H60DF within the broader IGBT portfolio. The HB series focuses on maximizing efficiency through reduced switching losses while maintaining robust short-circuit withstand capability.
Replacement Considerations
Direct substitutes include STGWT30V60DF and STGW20H60DF, provided voltage and current ratings align with the circuit requirements. Verify that alternative parts maintain similar VCE(sat) and switching times to ensure no degradation in converter efficiency or thermal performance.
