ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 30A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：151µJ (on), 293µJ (off)
- Input Type：Standard
- Gate Charge：149 nC
- Td (on/off) @ 25°C：37ns/146ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
Download product information
Overview
The STGWT30H65FB is a trench gate field-stop IGBT from the HB2 series, rated for 650 V collector-emitter voltage and 30 A continuous collector current. It utilizes an advanced proprietary structure to optimize conduction and switching performance. Key electrical parameters include a maximum junction temperature of 175 °C and a typical saturation voltage of 1.65 V at 30 A. The device features minimized tail current and tight parameter distribution for safe paralleling. It is housed in a TO-247 long leads package with a co-packaged protection diode.
Feature Summary
- Advanced trench gate field-stop structure for optimized efficiency
- Co-packaged fast soft recovery antiparallel diode
- Positive VCE(sat) temperature coefficient for safe paralleling
Applications
- High frequency converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the procurement channel provides original manufacturer documentation. Check for recent product change notifications regarding material or packaging updates before finalizing orders.
Selection Notes
Select this component for designs requiring high switching speeds and low conduction losses at 650 V. The positive temperature coefficient facilitates parallel operation without active current sharing circuits. Verify that the gate drive circuit supports the required switching frequencies to leverage the minimized tail current benefits.
Part Context
This part belongs to the STMicroelectronics HB2 series, representing an evolution of trench gate field-stop technology. It succeeds earlier HB series devices by offering improved VCE(sat) behavior at low currents and reduced switching energy. The series targets industrial applications demanding high reliability and efficiency.
Replacement Considerations
Direct replacements within the same series include STGWA30HP65FB2 and STGWA30H65DFB2. These variants share similar electrical ratings but may differ in specific thermal resistance or diode characteristics. Verify pin compatibility and mounting requirements before substitution.
