ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 60A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：383µJ (on), 233µJ (off)
- Input Type：Standard
- Gate Charge：163 nC
- Td (on/off) @ 25°C：45ns/189ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
Download product information
Overview
The STGWT30V60F is a high-speed N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. The device operates within a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 260 W. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V at 30 A and a switching frequency capability of 1 MHz.
Feature Summary
- Trench gate field-stop structure for optimized conduction and switching performance
- High-speed switching characteristics suitable for high-frequency converters
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
Applications
- High-frequency motor drives
- Industrial power supplies
- Inverters and converters
Procurement Notes
Verify the specific suffix 'DF' or 'F' against the required datasheet revision, as packaging and minor electrical tolerances may differ between variants. Confirm RoHS compliance status and check for end-of-life notices, as availability for this component type may be limited due to manufacturing phase-outs. Ensure the TO-247 package matches the thermal management design requirements.
Selection Notes
Select this IGBT when designing circuits requiring fast switching speeds up to 1 MHz with moderate current handling. The low saturation voltage contributes to reduced conduction losses, while the tail-less switching behavior minimizes turn-off losses. Consider the thermal resistance and heat sink requirements given the 260 W power dissipation rating in your system layout.
Part Context
This component belongs to the ST V Series of IGBTs, which are designed to balance conduction and switching losses for efficiency. The series utilizes proprietary trench gate field-stop technology to achieve high performance in power conversion applications. It is part of ST's portfolio aimed at improving energy efficiency in industrial and automotive systems.
Replacement Considerations
Direct substitutes include STGW30V60DF and STGB30V60DF, which share similar electrical ratings and package types. Verify pinout compatibility and thermal characteristics before substitution. Other manufacturers' 600V 30A IGBTs in TO-247 packages may serve as alternatives if electrical parameters align.
