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Product Detailed Parameters
- Description：IGBT 1300V 63A TO-3P
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1300 V
- Current - Collector (Ic) (Max)：63 A
- Current - Collector Pulsed (Icm)：125 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 20A
- Power - Max：250 W
- Switching Energy：3.4mJ (off)
- Input Type：Standard
- Gate Charge：127 nC
- Td (on/off) @ 25°C：-/284ns
- Test Condition：960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT38IH130D is a very fast IGBT developed using advanced PowerMESH technology, offering an excellent trade-off between switching performance and low on-state behavior. It features a collector-emitter voltage of 1300 V and a continuous collector current of 33 A at TC = 100 °C. The device operates with a maximum junction temperature of 150 °C and includes an integrated free-wheeling diode with a forward voltage of 1.7 V at 20 A. Packaged in TO-3P, it provides a thermal resistance from junction to case of 0.5 °C/W for the IGBT.
Feature Summary
- Advanced PowerMESH technology ensures optimal balance between switching speed and conduction losses.
- Very fast switching characteristics suitable for resonant and soft-switching applications.
- Integrated free-wheeling diode with low static and peak forward voltage drop.
Applications
- Induction cooking
- Microwave ovens
- Soft-switching applications
Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm package type matches design requirements, as this model uses the TO-3P housing. Check datasheet revision history for any updates to electrical parameters or mechanical dimensions before finalizing integration into production systems.
Selection Notes
Select this component for high-frequency resonant converters requiring robust switching performance. Ensure gate drive circuits support the specified voltage levels and that thermal management solutions can handle the junction-to-case resistance. Evaluate system constraints against the absolute maximum ratings to prevent operation beyond safe limits.
Part Context
This part belongs to the STGW/IH series of trench-gate field-stop IGBTs designed for high-voltage applications. It shares architectural similarities with other models in the family but is distinguished by its specific voltage rating and TO-3P packaging configuration tailored for industrial power conversion needs.
Replacement Considerations
STGW38IH130D (TO-247 long leads) and STGWS38IH130D (TO-247) are electrically equivalent alternatives within the same product line. Verify pinout compatibility and thermal interface requirements when substituting packages.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
Does the device include an integrated diode?
Yes, it features an integrated free-wheeling diode with a typical forward voltage of 1.7 V at 20 A.
What technology is used for this IGBT?
It utilizes advanced PowerMESH technology to optimize the trade-off between switching performance and on-state behavior.
