STGWT40H65DFB

Overview

The STGWT40H65DFB is a single N-channel IGBT from the HB series, utilizing trench gate field-stop technology. It features a collector-emitter voltage (VCES) of 650 V and a continuous collector current (IC) of 80 A at TC = 25 °C. The device operates with a maximum junction temperature (TJ) of 175 °C and total power dissipation (PTOT) of 283 W at TC = 25 °C. Key electrical parameters include a typical saturation voltage (VCE(sat)) of 1.6 V at IC = 40 A and a gate-emitter voltage rating of ±20 V. The component is housed in a TO-3P package.

Feature Summary

• Advanced trench gate field-stop structure for optimized conduction and switching loss balance
• Positive VCE(sat) temperature coefficient enabling safe paralleling operation
• Integrated very fast soft recovery antiparallel diode
• Minimized tail current for high-speed switching applications

Applications

• Photovoltaic inverters
• High frequency converters

Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct revision status. Confirm that the TO-3P package dimensions align with the target PCB footprint requirements. Check for environmental compliance markings such as ECOPACK grades if restricted substances are a constraint for the intended assembly process.

Selection Notes

Select this component when designing circuits requiring high efficiency at elevated frequencies. The tight parameter distribution supports reliable parallel configurations for higher current demands. Ensure thermal management solutions can maintain the case temperature within limits to sustain the rated 80 A continuous current capability without exceeding the 175 °C junction limit.

Part Context

This device belongs to the HB series of IGBTs developed by STMicroelectronics. The series focuses on achieving an optimum compromise between conduction and switching losses. This specific part number represents the 40 A / 650 V variant within the high-speed family, designed to maximize converter efficiency through advanced semiconductor structures.

Replacement Considerations

Direct substitutes within the same series include STGW40H65DFB and STGWA40H65DFB. Verify pinout compatibility and thermal resistance values before substitution. Cross-referencing datasheets is required to confirm identical switching characteristics and package mechanical dimensions.