SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGWT40V60DF is a single N-channel IGBT from the V series, utilizing Trench Gate Field-Stop technology. It features a collector-emitter voltage (VCEO) of 600 V and a continuous collector current (IC) of 80 A at 25 °C. The typical saturation voltage (VCEsat) is 1.8 V at IC = 40 A. The device operates within a junction temperature range of -55 °C to +175 °C and is housed in a TO-247 package with a power dissipation rating of 283 W.
Verify the specific datasheet revision and ordering code when sourcing. Confirm RoHS compliance status and lead times directly with authorized distributors or STMicroelectronics representatives prior to procurement.
Select this component for designs requiring low switching losses and high efficiency at very high frequencies. Ensure thermal management supports the specified power dissipation and junction temperature limits during operation.
This part belongs to the STMicroelectronics V series IGBTs, which are designed to balance conduction and switching losses. The series utilizes proprietary trench gate field-stop technology to maximize converter efficiency.
Compatible alternatives include the STGB40V60F (D2PAK package) and STGW40V60DF (TO-247 package). Verify pinout compatibility and thermal resistance differences before substitution.