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The STGWT60V60DF is a single N-channel IGBT from the Trench Gate Field Stop V series by STMicroelectronics. It features a 600 V collector-emitter voltage (VCEO) and a maximum continuous collector current (Ic) of 60 A. The device supports a switching speed of 1 MHz and has a maximum power dissipation (Pd) of 375 W. Key electrical parameters include a maximum gate-emitter voltage (VGEO) of 20 V, a collector-emitter saturation voltage (VceSAT) of 2.3 V, and an operating temperature range from -55°C to 175°C. It is housed in a TO-247 package with three pins for through-hole mounting.
Verify the exact part number against official STMicroelectronics documentation, as variations such as STGW60V60DF may appear in distributor listings. Confirm that the component matches the specified Trench Gate Field Stop architecture and TO-247 packaging. Ensure compatibility with required thermal management solutions given the 375 W power dissipation rating. Check for any specific handling instructions related to the through-hole installation process.
Select this component when designing circuits that require a balance between high voltage blocking capability and fast switching speeds. The 60 A current rating makes it suitable for medium-to-high power applications. Consider the 2.3 V saturation voltage for efficiency calculations in conduction loss scenarios. The TO-247 package facilitates effective heat sinking for thermal management in high-power density designs.
This IGBT belongs to STMicroelectronics' V series, which utilizes advanced trench gate field-stop technology. This technology is engineered to optimize the trade-off between switching losses and conduction losses. The series is designed for applications where high reliability and efficient power control are critical, distinguishing it from standard planar IGBTs through improved switching characteristics.
Public confirmed substitute part numbers are not available in the provided source material.