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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 120A TO-3P
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 80A
- Power - Max：469 W
- Switching Energy：2.1mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：414 nC
- Td (on/off) @ 25°C：84ns/280ns
- Test Condition：400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr)：85 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The STGWT80H65DFB is an N-channel trench gate field-stop IGBT from the HB series, rated at 650 V collector-emitter voltage and 80 A continuous current. It features a TO-3P package with three pins for through-hole mounting. Key electrical parameters include a maximum power dissipation of 469 W, a typical saturation voltage of 2 V, and a switching speed of 1 MHz. The device operates within a temperature range of -55°C to 175°C, with a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Utilizes advanced trench gate field-stop structure for optimized efficiency in frequency converters.
- Features a Kelvin pin that separates the power path from the driving signal for faster switching events.
- Includes a very fast soft recovery antiparallel diode to enhance switching performance.
Applications
- High-speed frequency converter designs
- Industrial motor drive systems
- Power supply units requiring high reliability
Procurement Notes
Verify the specific suffix against official datasheets to confirm package type and electrical characteristics. Ensure compatibility with existing thermal management solutions due to the TO-3P form factor. Confirm lead-free compliance requirements match the ECOPACK standard if applicable. Cross-reference the manufacturer's latest product change notifications for any updates to the component specifications or manufacturing location before finalizing procurement plans.
Selection Notes
Select this component when a robust through-hole solution is required for high-power applications. The TO-3P package offers distinct mechanical advantages over surface-mount alternatives for certain chassis designs. Consider the 1 MHz switching capability for applications demanding rapid response times. Evaluate the thermal resistance characteristics to ensure adequate heat sinking is integrated into the system architecture for sustained operation at maximum ratings.
Part Context
This device belongs to STMicroelectronics' HB series of IGBTs, which are engineered to balance conduction and switching losses. The series utilizes proprietary trench gate technology to minimize tail current and improve overall system efficiency. It is designed as a standalone single switch suitable for various medium-to-high power electronic conversion circuits.
Replacement Considerations
STGW80H65DFB: Similar HB series IGBT but housed in a TO-247 package rather than TO-3P. Verify pinout compatibility and thermal interface differences before substitution.
