STGY50NC60WD

$10.42

Description：IGBT 600V 110A MAX247
Series：PowerMESH™

SKU:d715c7255d1e Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 110A MAX247
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：110 A
Current - Collector Pulsed (Icm)：180 A
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 40A
Power - Max：278 W
Switching Energy：365µJ (on), 560µJ (off)
Input Type：Standard
Gate Charge：195 nC
Td (on/off) @ 25°C：52ns/240ns
Test Condition：390V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：55 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：MAX247™
Grade：-
Qualification：-

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STGY50NC60WD

Overview

The STGY50NC60WD is a 600 V, 50 A ultra fast IGBT utilizing the Power MESH™ process. It features an integrated antiparallel diode with very soft ultra fast recovery characteristics. The device supports high frequency operation up to 50 kHz and offers low CRES/CIES ratio to prevent cross-conduction susceptibility. Key electrical parameters include a collector-emitter saturation voltage of 2.1 V at 40 A (25 °C), total switching losses of 925 µJ at 390 V/40 A, and a thermal resistance junction-case of 0.45 °C/W for the IGBT.

Feature Summary

Utilizes advanced Power MESH™ process for optimized trade-off between switching performance and on-state behavior
Features very soft ultra fast recovery antiparallel diode
Low CRES/CIES ratio eliminates cross-conduction susceptibility
Designed for very high frequency operation

Applications

Very high frequency inverters and UPS systems
High frequency SMPS and PFC in hard switch and resonant topologies
Motor drivers
Welding equipment

Procurement Notes

Verify component authenticity by checking the marking code GY50NC60WD against the Max247 package specifications. Confirm environmental compliance status via ECOPACK® documentation. Ensure sourcing from authorized distributors to guarantee datasheet revision 5 accuracy and valid warranty coverage.

Selection Notes

Select this component for designs requiring high frequency switching capabilities above standard limits. Evaluate thermal management requirements based on the 0.45 °C/W junction-case resistance. Consider the integrated diode's reverse recovery charge (Qrr) for snubber design in resonant topologies. Verify gate drive voltage compatibility with the specified ±20 V rating.

Part Context

This device belongs to the STMicroelectronics ultra fast IGBT series. It is packaged in the Max247 through-hole configuration. The product utilizes silicon technology and is designed for industrial power conversion applications where high efficiency and fast switching speeds are critical requirements.